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Basic Electrical Engineering BEE Diploma Solved Paper Nov 2016

BASIC ELECTRONICS 2nd SEM
EXAM/ECE/CSE/IT/EEE/0664/Nov 2016

  •   Basic Electronics PSBTE Diploma Solved Paper Nov 2016                                               SECTION-A

Q1. Do as directed.                                                                                                                     15×1=15

  1. Valence electrons are present in Outermost orbit of an atom.
  2. The process of adding impurity to an intrinsic semiconductor is called Doping.
  3. The value of knee voltage for silicon diode is 0.7 V
  4. Zener diode is made to operate in Zener Breakdown Region.
  5. The maximum efficiency of full- wave rectifier is 81.2 %.
  6. A transistor contains Two PN Junction.
  7. An ideal value of stability factor is Zero.
  8. The point of intersection of DC and AC load line is Operating Point .
  9. FET stands for Field Effect Transistor.
  10. FET is a Uni Polar Device.
  11. PIV Stands for Peak Inverse Voltage .
  12. The Potential biasing is most widely used.
  13. The emitter of a transistor is doped Heavily.
  14. The minority carriers in N type semiconductors are Holes.
  15. MOSFET has Three terminals.

          SECTION-B

Q2. Attempt any five questions.                                                                    5×6=30

  1. Define doping .
  2. Write a note on Zener
  3. Why a bridge rectifier is preferred over a center-tap full wave rectifier?
  4. Explain the working of PNP transistor with .
  5. Write a note on stabilization and what is its
  6. Write down the significance of h-parameters.
  7. Distinguish between FET and

   SECTION-C

Q3. Attempt any three questions.                                                      3×10=30

  1. Draw and explain the V-I characteristics of PN junction
  2. Draw and explain the Common Emitter
  3. Explain potential divider bias circuit with
  4. Explain the circuit diagram of single stage transistor
  5. Explain the construction and operation of

BASIC ELectronics be may 2018 DIPLOMA PAPER SOLUTION

Section B : BE PAPER MAY 2018 PAPER

Intrinsic and Extrinsic Semi-conductor Click Here.

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BASIC ELECTRONICS DIPLOMA MAY 2018 PAPER

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