BASIC ELECTRONICS 2nd Sem Exam/ECE/CSE/IT/EEE/Dec 2017

 Basic Electronics Diploma Solved Paper Dec 2017                                           

                              SECTION-A

Q1. Fill in the Blanks                                                                                                                      15×1=15

  1. The input impedance of a FET is Larger than that of BJT.
  2. ICEO =(1 + ß) ICBO
  3. The process of adding impurities is called Doping
  4. The turn on voltage in a silicon diode is 0.7 V
  5. A zener diode is always operated in Zener Breakdown Region.
  6. Holes are Minority carriers in N-type Semiconductor.
  7. When the gate terminal of MOSFET is positive it is said to operate in E-Mode.
  8. The unit of hie is  Ohm.
  9. In a transistor there are Two PN Junctions.
  10. The point of intersection of dc and ac load line is called Q-Point or Operating Point

              SECTION-B

Q2. Attempt any five questions.                                                                    5×6=30

  1. What is ripple factor? How it can be minimized?
  2. Explain zener diode as a voltage Regulator ?
  3. Explain intrinsic and extrinsic Semiconductor ?
  4. Give construction and working of MOSFET ?
  5. Explain the working of half wave Rectifier ?
  6. Draw the circuit diagram of CE amplifier. Explain Briefly ?
  7. What do you mean by h parameters of a transistor? Explain briefly

                  SECTION-C

Q3. Attempt any three questions.                                                       3×10=30

  1. Explain construction of NPN transistor. Explain how it can be used as
  2. Discuss energy band structure for insulators, semiconductors and
  3. Write a short note on (any two)
    1. Filter circuits
    2. AC and DC load line
    3. Avalanche breakdown
    4. What are various transistor biasing circuits? Compare their advantages and Diadvantages ?
    5. With the help of a diagram, explain the working of a Bridge Type Full wave Rectifier ?

BASIC ELectronics be DEC 2017 DIPLOMA PAPER SOLUTION

Section a FILL IN THE BLANKS bASIC ELECTRONICS DEC 2017 DIPLOMA paper

The input impedance of a FET is Larger than that of BJT.

ICEO =(1 + ß) ICBO

 

The process of adding impurities is called Doping

 

The turn on voltage in a silicon diode is 0.7 V

 

A zener diode is always operated in Zener Breakdown Region.

Holes are Minority carriers in N-type Semiconductor.

When the gate terminal of MOSFET is positive it is said to operate in E-Mode.

The unit of hie is  Ohm.

In a transistor there are Two PN Junctions.

The point of intersection of dc and ac load line is called Q-Point or Operating Point

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Section B : Basic electronics be PAPER dec 2017 PAPER

 Ripple factor? How it can be minimized.

Zener diode as a voltage Regulator

Intrinsic and Extrinsic Semiconductor ?

Construction and working of MOSFET 

Working of half wave Rectifier 

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BASIC ELECTRONICS DIPLOMA MAY 2019 SUBJECT CODE 0664 PAPER

Section c solved bASIC ELECTRONICS BE DIPLOMA paper DEC 2017

Explain construction of NPN transistor

Energy band structure for insulators, semiconductors and Conductors.

 

Write a short note on (any two)

    1. Filter circuits
    2. AC and DC load line
    3. Avalanche breakdown

Various transistor biasing circuits

Compare their advantages and Disadvantages 

 

Explain the working of a Bridge Type Full wave Rectifier 

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