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Basic Electronics BE Diploma Solved Question Paper Dec 2017

BASIC ELECTRONICS 2nd Sem Exam/ECE/CSE/IT/EEE/Dec 2017

Basic Electronics Diploma Solved Paper Dec 2017                                           

                            SECTION-A

Q1. Fill in the Blanks                                                                                                                    15×1=15

  1. The input impedance of a FET is Larger than that of BJT.
  2. ICEO =(1 + ß) ICBO
  3. The process of adding impurities is called Doping.
  4. The turn on voltage in a silicon diode is 0.7 V
  5. A zener diode is always operated in Zener Breakdown Region.
  6. Holes are Minority carriers in N-type Semiconductor.
  7. When the gate terminal of MOSFET is positive it is said to operate in E-Mode.
  8. The unit of hie is  Ohm.
  9. In a transistor there are Two PN Junctions.
  10. The point of intersection of dc and ac load line is called Q-Point or Operating Point.

          SECTION-B

Q2. Attempt any five questions.                                                                    5×6=30

  1. What is ripple factor? How it can be minimized?
  2. Explain zener diode as a voltage Regulator ?
  3. Explain intrinsic and extrinsic Semiconductor ?
  4. Give construction and working of MOSFET ?
  5. Explain the working of half wave Rectifier ?
  6. Draw the circuit diagram of CE amplifier. Explain Briefly ?
  7. What do you mean by h parameters of a transistor? Explain briefly

                SECTION-C

Q3. Attempt any three questions.                                                      3×10=30

  1. Explain construction of NPN transistor. Explain how it can be used as
  2. Discuss energy band structure for insulators, semiconductors and
  3. Write a short note on (any two)
    1. Filter circuits
    2. AC and DC load line
    3. Avalanche breakdown
    4. What are various transistor biasing circuits? Compare their advantages and Diadvantages ?
    5. With the help of a diagram, explain the working of a Bridge Type Full wave Rectifier ?

BASIC ELectronics be DEC 2017 DIPLOMA PAPER SOLUTION

Section a FILL IN THE BLANKS bASIC ELECTRONICS DEC 2017 DIPLOMA paper

The input impedance of a FET is Larger than that of BJT.

ICEO =(1 + ß) ICBO

 

The process of adding impurities is called Doping

 

The turn on voltage in a silicon diode is 0.7 V

 

A zener diode is always operated in Zener Breakdown Region.

Holes are Minority carriers in N-type Semiconductor.

When the gate terminal of MOSFET is positive it is said to operate in E-Mode.

The unit of hie is  Ohm.

In a transistor there are Two PN Junctions.

The point of intersection of dc and ac load line is called Q-Point or Operating Point

Three

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Section B : Basic electronics be PAPER dec 2017 PAPER

 Ripple factor? How it can be minimized.

Zener diode as a voltage Regulator

Intrinsic and Extrinsic Semiconductor ?

Construction and working of MOSFET 

Working of half wave Rectifier 

Basic Electronics PSBTE Diploma Solved Paper May 2019 Solution Click Here

BASIC ELECTRONICS DIPLOMA MAY 2019 SUBJECT CODE 0664 PAPER

Section c solved bASIC ELECTRONICS BE DIPLOMA paper DEC 2017

Explain construction of NPN transistor

Energy band structure for insulators, semiconductors and Conductors.

 

Write a short note on (any two)

    1. Filter circuits
    2. AC and DC load line
    3. Avalanche breakdown

Various transistor biasing circuits

Compare their advantages and Disadvantages 

 

Explain the working of a Bridge Type Full wave Rectifier 

BASIC ELECTRONICS 2nd SEMESTER EXAM/ECE/CSE/IT/EEE/0664/May 2019 Contact Us
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