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Basic Electronics Diploma EEE/CSE/ Dec 2016 Paper

BASIC ELECTRONICS 2nd SEM
EXAM/ECE/CSE/IT/EEE/0664/Dec 2016

BASIC ELECTRONICS 2nd SEM EXAM/CSE/IT/EEE/0664/Dec 2016                                SECTION-A

Q1. Do as directed.                                                                                                    15×1=15

  1. Valence electrons are present in Outermost orbit of an atom.
  2. The process of adding impurity to an intrinsic semiconductor is called Doping .
  3. The value of knee voltage for silicon diode is 0.7 Volt
  4. Zener diode is made to operate in Zener Breakdown Region.
  5. The maximum efficiency of full- wave rectifier is 81.2 %
  6. A transistor contains Two (2) PN Junction.
  7. An ideal value of stability factor is Zero.
  8. The point of intersection of DC and AC load line is Q-Point.
  9. FET stands for Field Effect Transistor.
  10. FET is a Uni Polar Device.
  11. PIV Stands for Peak Inverse Voltage.
  12. The Potential Divider biasing is most widely used.
  13. The emitter of a transistor is doped Highly .
  14. The minority carriers in N type semiconductors are Holes.
  15. MOSFET has Three terminals.

                    SECTION-B

Q2. Attempt any five questions.                                                 5×6=30

  1. Define doping ?
  2. Write a note on Zener Diode ?
  3. Why a Bridge rectifier is preferred over a center-tap full wave rectifier?
  4. Explain the working of PNP transistor with diagram ?
  5. Write a note on stabilization and what is its Need ?
  6. Write down the significance of h-parameters.
  7. Distinguish between FET and BJT ?

                     SECTION-C

Q3. Attempt any three questions.                                                           3×10=30

  1. Draw and explain the V-I characteristics of PN junction ?
  2. Draw and explain the Common Emitter Characteristics ?
  3. Explain Potential Divider Bias Circuit with diagram ?
  4. Explain the circuit diagram of single stage transistor amplifier ?
  5. Explain the construction and operation of FET ?

BASIC ELectronics be may 2018 DIPLOMA PAPER SOLUTION

Section a FILL IN THE BLANKS be paper

Field Effect Transistor

Peak Inverse Voltage

The Potential Divider

Holes

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BASIC ELECTRONICS DIPLOMA MAY 2018 PAPER

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