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Basic Electronics May 2019 (Batch 2018) PSBTE Paper

2nd Exam/ECE/CSE/IT/MECHATRONIC/0190/May’19
(FOR 2018 BATCH)


Q1. Fill in the Blanks                                                                                                                                      15×1=15

  1. Under normal operating voltages the reverse current in a silicon junction diode is in 1μA .
  2. Ripple factor in full wave rectifier is 0.48
  3. CMOS means Complementary Metal Oxide Semiconductor.
  4. Write the relation between α and β. solution β.=α /1-α
  5. Biasing in transistor is done to stabilize the Operating Point (Q -Point).
  6. At absolute zero temperature an intrinsic semiconductor behaves like Insulator.
  7. In saturation region both junctions of transistors are Forward Biased.
  8. When a P-N junction is heavily doped its breakdown voltage will Decrease.
  9. Operation of JFET involves Majority Carrier.
  10. Boron has Four valence .
  11. An ideal diode has Zero forward Resistance.
  12. The ideal value of stability factor is  one.
  13. The communication path in an FET through which the carriers flow between drain and source is called Channel.
  14. A capacitor circuit does not allow passing  dc Components.
  15. The material used for the construction of LED is band GaAsP.


Q2. Attempt any five questions.                                                                                                                                                                             5×6=30

  1. Compare the MOSFET and BJT ?
  2. Explain the behavior of P-N junction under different bias Conditions ?
  3. Draw h- model of CE Amplifier.
  4. Describe the importance of load line with suitable Diagram ?
  5. Explain the terms avalanche and Zener Breakdown ?
  6. Give advantages and applications of CMOS.
  7. Derive the relation Ic = αIE + ICBO and explain different terms used in them.
  8. Write a note on drift and diffusion.
  9. What is a filter circuit? Explain the working of LC filter


Q3. Attempt any three questions.                                                                                                                                                                               3×10=30

  1. Compare CB, CE and CC Configurations with at least five
  2. With the help of diagram and waveforms, Explain working of Center tap full wave
  3. Explain the divider method of biasing for transistor (CE).
  4. Write a short note on any two of the following:
    1. Thermal Runaway
    2. Varactor diode (Symbol, operation, application.
    3. BJT as an a Amplifier.
  1. Explain Construction, operation and characteristics of a MOSFET in depletion and enhancement modes.

Basic Electronics BE 2nd Semester May 2019 (Batch 2018) PSBTE Question Paper for Only Batch 2018 for CSE and ECE

Basic Electronics BE 2nd Semester May 2019 (Batch 2018) PSBTE Question Paper Download Here

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