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Electronics-1 Dec 2016 3rd Sem Electrical Engineering Diploma Paper

Download Previous Year Diploma Solved Question Paper of Electronics-1 Dec 2016 3RD Sem Electrical Engineering Diploma Paper

Electronics-1 Dec 2016 3RD Sem Electrical Engineering Diploma Paper

                                    SECTION-A

Q1. Fill in the blanks.                                                      10×1.5=15

a. The process of adding impurities is called _________
b. The unit of inductance is ______________
c. The turn on voltage of Germanium diode is _______ volt.
d. LED stands for ______________ .
e. Usually, a zener diode is used as a _______________ .
f. A current source with _________ internal resistance is called ideal voltage source.
g. The opposition to the flow of current in a.c. source is called _____________- .
h. Resistivity of semi conductors lies between ___________ and ____________ .
i. An ideal diode has _________ forward resistance.
j. The max. efficiency of full wave rectifier is ______________
k. The capacitor circuit does not allow to pass ______ component.
l. The valence electrons are present in _________ orbit of an atom.
m. __________ diode has a negative resistance.
n. The ____________ biasing is most widely used.
o. __________ region of the transistor is the best place for operating point.

                                  SECTION-B

Q2. Attempt any SIX questions.                                                                    6×5=30

a) Classify different types of materials on the basis of Energy band diagram.
b) Describe the working of PNP transistor.
c) Describe the working of a FULL wave rectifier.
d) How does temperature effect the conductivity of an intrinsic semiconductor?
e) Write a short note on PN- junction. Draw its V-I characteristics.
f) Explain zener diode as voltage regulator.
g) Discuss the advantages of FET over conventional transistor.
h) What is faithful amplification? Explain in brief.

                                   SECTION-C

Q3. Attempt any three questions.                                                      3×10=30

a. With the help of diagram and waveform, explain the working of centre tap full wave rectifier.
b. Explain the common base (CB) transistor configuration with the help of circuit diagram. Draw and explain its input and output characteristics.
c. Draw the circuit diagram of single stage CE amplifier. State the function of each component used in the circuit.
d. Explain the construction, operation and characteristics of MOSFET in depletion mode.
e. Explain the construction and operation of FET. Also write the applications of FET.

Electronics-1 Dec 2016 3RD Sem Electrical Engineering Solved PSBTE Diploma Paper

                                    SECTION-A

Q1. Fill in the blanks.                                                      10×1.5=15

a. The process of adding impurities is called Doping .
b. The unit of inductance is Henry .
c. The turn on voltage of Germanium diode is 0.3 volt.
d. LED stands for Light Emitting Diode .
e. Usually, a zener diode is used as a Voltage Regulator .
f. A current source with Infinite internal resistance is called ideal voltage source.
g. The opposition to the flow of current in a.c. source is called Impedance.
h. Resistivity of semi conductors lies between Conductor and Insulator .
i. An ideal diode has Zero forward resistance.
j. The max. efficiency of full wave rectifier is 81.2 %.
k. The capacitor circuit does not allow to pass dc component.
l. The valence electrons are present in Outermost orbit of an atom.
m. IMPATT diode has a negative resistance.
n. The Potential Divider biasing is most widely used.
o. Active region of the transistor is the best place for operating point.

The process of adding impurities is called Doping .

The unit of inductance is Henry .

The turn on voltage of Germanium diode is 0.3 volt.

LED stands for Light Emitting Diode .

Usually, a zener diode is used as a Voltage Regulator .

A current source with High internal resistance is called ideal voltage source.

The opposition to the flow of current in a.c. source is called Impedance .

Resistivity of semi conductors lies between Semiconductor and Insulator .

The max. efficiency of full wave rectifier is 81.2 % .

The capacitor circuit does not allow to pass DC component.

The valence electrons are present in Outermost orbit of an atom.

IMPATT diode has a negative resistance.

Related Post

The Potential Divider biasing is most widely used.

Active region of the transistor is the best place for operating point.

Electronics-1 May 2019 3RD Sem Electrical Engineering Diploma Paper Click Here

Types of materials on the basis of Energy band diagram.

Working of PNP transistor.

Working of a FULL wave rectifier.

Effect the conductivity of an intrinsic semiconductor

PN- junction and its V-I characteristics.

Zener diode as voltage regulator.

Advantages of FET over conventional transistor.

Electronics-1 Dec 2016 3RD Sem Electrical Engineering Diploma Solved Paper Click Here

Electronics-1 DEC 2016 3RD Sem Electrical Engineer ing Diploma Paper

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