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Electronics-1 Dec 2017 3rd Sem Electrical Engineering Diploma Paper

Download Previous Year Diploma Solved Question Paper of Electronics-1 Dec 2017 3RD Sem Electrical Engineering Diploma Paper

Electronics-1 Dec 2017 3RD Sem Electrical Engineering Diploma Paper

                                    SECTION-A

Q1. Fill in the blanks.                                                      10×1.5=15

a. The input impedance of a FET is ___________ than that of BJT.
b. ICEO =______ + ICBO.
c. The process of adding impurities is called _____________.
d. The turn on voltage in a silicon diode is ______________ .
e. A zener diode is always operated in _________ region.
f. Holes are ___________ carriers in N-type semiconductors.
g. When the gate terminal of MOSFET is positive it is said to operate in _____________ .
h. The unit of hie is ______________ .
i. In a transistor there are __________ PN junctions.
j. The point of intersection of dc and ac load line is called _____________ .

                                  SECTION-B

Q2. Attempt any SIX questions.                                                                    6×5=30

i. What is ripple factor? How it can be minimized.
ii. Explain zener diode as a voltage regulator.
iii. Explain intrinsic and extrinsic semiconductors.
iv. Give construction and working of MOSFET.
v. Explain the working of half wave rectifier.
vi. Draw the circuit diagram of CE amplifier. Explain briefly.
vii. What do you mean by h parameters of a transistor? Explain briefly.

                                   SECTION-C

Q3. Attempt any three questions.                                                      3×10=30

a. Explain construction of NPN transistor. Explain how it can be used as amplifier.
b. Explain the working of two stages RC Couples Amplifier with diagrams.
c. Write a short note on–
i. Filter circuits
ii. Avalanche breakdown
d. Compare between FET, JFET and MOSFET.
e. With the help of a diagram, explain the working of a bridge rectifier

Electronics-1 Dec 2017 3RD Sem Electrical Engineering Solved PSBTE Diploma Paper

                                    SECTION-A

Q1. Fill in the blanks.                                                      10×1.5=15

a. The input impedance of a FET is Higher than that of BJT.
b. ICEO =______ + ICBO.
c. The process of adding impurities is called Doping .
d. The turn on voltage in a silicon diode is 0.7 Volt .
e. A zener diode is always operated in Breakdown region.
f. Holes are Minority carriers in N-type semiconductors.
g. When the gate terminal of MOSFET is positive it is said to operate in _____________ .
h. The unit of hie is Input Impedance .
i. In a transistor there are Two PN junctions.
j. The point of intersection of dc and ac load line is called Q-Point .

The input impedance of a FET is Higher than that of BJT.

ICEO =______ + ICBO.

The process of adding impurities is called Doping .

The turn on voltage in a silicon diode is 0.7 Volt  .
 

A zener diode is always operated in Breakdown region.

Holes are Minority carriers in N-type semiconductors.
 

When the gate terminal of MOSFET is positive it is said to operate in _____________ .
 

The unit of hie is Input Impedance .
 

In a transistor there are Two PN junctions.

 

The point of intersection of dc and ac load line is called Q-Point .

Electronics-1 dec 2017 3RD Sem Electrical Engineering Diploma Paper Click Here

Ripple factor 

Related Post

Zener diode as a voltage regulator.

Intrinsic and extrinsic semiconductors.
 

Construction and working of MOSFET.

Working of half wave rectifier.

Difference between JFET and ordinary transistor (BJT).

Electronics-1 DEC 2017 3RD Sem Electrical Engineering Diploma Solved Paper Click Here

Electronics-1 DEC 2017 3RD Sem Electrical Engineer ing Diploma Paper

Construction of NPN transistor.

Transistor as amplifier.

Working of two stages RC Couples Amplifier.

Compare between FET, JFET and MOSFET.

Electronics-1 DEC 2017 3RD Sem Electrical Engineering Diploma Solved Paper Contact Us
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