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Electronics-1 Dec 2018 3rd Sem Electrical Engineering Diploma Paper

Download Previous Year Diploma Solved Question Paper of Electronics-1 Dec 2018 3RD Sem Electrical Engineering Diploma Paper

Electronics-1 Dec 2018 3RD Sem Electrical Engineering Solved PSBTE Diploma Paper

                                    SECTION-A

Q1. Fill in the blanks.                                                      10×1.5=15

a. The electronic components which cannot process the signal are called __________ .
b. The process of adding impurities in intrinsic semiconductor material is called _________.
c. Resistivity of a semiconductor lies between ________ .
d. The value of knee voltage for silicon diode is ________ volts.
e. An ideal diode has __________ reverse resistance.
f. A zener diode is always operated in the ________ region.
g. __________ Diode has a negative resistance.
h. In a transistor, there are _______ pn junctions.
i. The emitter of a transistor is ____________ doped.
j. The biasing circuit which gives best stability to the Q point is ________ .
k. The ideal value of stability factor is ________ .
l. A transistor with its associated circuitry for amplification is called a _______.
m. In an amplifier, power gain = current gain x ________gain.
n. The point at which DC and AC load lines interact each other is called ___________.
o. A FET has three terminals namely; source, drain and ____________.

                                  SECTION-B

Q2. Attempt any FIVE questions.                                                                    5×6=30

i. What are practical and ideal current and voltage sources?
ii. List the main differences between intrinsic and extrinsic semiconductors?
iii. Draw and explain V-I characteristics of P-N junction diode.
iv. What is the use of filter circuit? List different types of filters.
v. What do you mean by Saturation, Cut-off and Active regions?
vi. What are different types of couplings used in transistor amplifier?
vii. Write advantages and disadvantages of FET.

                                   SECTION-C

Q3. Attempt any three questions.                                                      3×10=30

a. With the help of circuit diagram and waveforms, explain the functioning of a full-wave rectifier.
b. Explain zener diode, its characteristics and applications.
c. Draw and explain the circuit of common-emitter configuration of transistor and its characteristics.
d. Describe the construction, operation and characteristics of FET with suitable diagrams

Electronics-1 Dec 2018 3RD Sem Electrical Engineering Solved PSBTE Diploma Paper

                                    SECTION-A

Q1. Fill in the blanks.                                                      10×1.5=15

a. The electronic components which cannot process the signal are called Passive Linear Circuit Elements .
b. The process of adding impurities in intrinsic semiconductor material is called Doping.
c. Resistivity of a semiconductor lies between Condctor and Insulator .
d. The value of knee voltage for silicon diode is 0.7 volts.

e. An ideal diode has Infinite reverse resistance.
f. A zener diode is always operated in the Breakdown region.
g. IMPATT Diode has a negative resistance.
h. In a transistor, there are Two pn junctions.
i. The emitter of a transistor is Highly doped.
j. The biasing circuit which gives best stability to the Q point is Potential Divider Biasing .
k. The ideal value of stability factor is Zero.
l. A transistor with its associated circuitry for amplification is called a ______.
m. In an amplifier, power gain = current gain x Voltage gain.
n. The point at which DC and AC load lines interact each other is called Q-Point .
o. A FET has three terminals namely; source, drain and Gate .

The electronic components which cannot process the signal are called Passive Linear Circuit Elements .

The process of adding impurities in intrinsic semiconductor material is called Doping.

Resistivity of a semiconductor lies between Condctor and Insulator .

The value of knee voltage for silicon diode is 0.7 volts.

 

An ideal diode has Infinite reverse resistance.

A zener diode is always operated in the Breakdown region.

IMPATT Diode has a negative resistance.

In a transistor, there are Two pn junctions.

The emitter of a transistor is Highly doped.

The biasing circuit which gives best stability to the Q point is Potential Divider Biasing .

The ideal value of stability factor is Zero.

A transistor with its associated circuitry for amplification is called a ______.

Related Post

In an amplifier, power gain = current gain x Voltage gain.

The point at which DC and AC load lines interact each other is called Q-Point .
.

A FET has three terminals namely; source, drain and Gate

Electronics-1 Dec 2018 3RD Sem Electrical Engineering Diploma Paper Click Here

Practical and ideal current and voltage sources.

Main differences between intrinsic and extrinsic semiconductors.

V-I characteristics of P-N junction diode.

Use of filter circuit.

List different types of filters.

Saturation, Cut-off and Active regions.

Different types of couplings used in transistor amplifier.

Advantages and disadvantages of FET.

Electronics-1 Dec 2018 3RD Sem Electrical Engineering Diploma Solved Paper Click Here

Electronics-1 dec 2018 3RD Sem Electrical Engineer ing Diploma Paper

Zener diode, characteristics and applications.

Common-emitter configuration of transistor and its characteristics.

Electronics-1 Dec 2018 3RD Sem Electrical Engineering Diploma Solved Paper Contact Us
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