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Electronics-1 May 2017 3rd Sem Electrical Engineering Diploma Paper

Download Previous Year Diploma Solved Question Paper of Electronics-1 May 2017 3RD Sem Electrical Engineering Diploma Paper

Electronics-1 May 2017 3RD Sem Electrical Engineering Diploma Paper

                                    SECTION-A

Q1. Fill in the blanks.                                                      10×1.5=15

a. An ideal current source has _______ internal resistance.
b. JFET stand for _____________ .
c. LED stand for _______________ .
d. The emitter of a transistor is ___________ doped.
e. Photo diode is optimized for its sensitivity to _____________ .
f. _____________ diode is used as voltage regulator.
g. In a bipolar transistor there are ___________ PN junctions.
h. A semi conductor has __________ coefficient of resistance.
i. The best biasing is achieved by __________ biasing circuit.
j. The point of intersection of dc and ac load line is called _____________ .
k. The ideal value of stability factor is __________.
l. In the saturation region of a transistor both the junctions are ____________ .
m. __________ diode has negative resistance.
n. A bridge rectifier is not suitable for ___________ voltage rectification.
o. The process of adding the impurity to an intrinsic semi conductor is called _____________

                                  SECTION-B

Q2. Attempt any SIX questions.                                                                    6×5=30

a. What is avalanche breakdown?
b. Explain why a transistor should be biased?
c. What is a varactor diode? Explain its applications.
d. What is the need of multistage amplifier?
e. Explain intrinsic and extrinsic semiconductor.
f. Distinguished between FET and BJT.
g. What do you mean by Constant voltage source?
h. Silicon is preferred over germanium, why?

                                   SECTION-C

Q3. Attempt any three questions.                                                      3×10=30

Q3. Explain the behavior of PN junction in forward and reverse biased condition.
Q4. Draw the circuit diagram of a single stage transistor amplifier and explain the function of each component.
Q5. Draw the circuit diagram of a full wave bridge rectifier and explain its working.
Q6. Describe various coupling used in multistage amplifiers. What is the need of coupling network?
Q7. Explain the construction, operation and characteristics of MOSFET in depletion mode.

Electronics-1 May 2017 3RD Sem Electrical Engineering Solved PSBTE Diploma Paper

                                    SECTION-A

Q1. Fill in the blanks.                                                      10×1.5=15

a. An ideal current source has Infinity internal resistance.
b. JFET stand for  Junction Field Effect Transistor .
c. LED stand for Light Emiting Diode .
d. The emitter of a transistor is Highly doped.
e. Photo diode is optimized for its sensitivity to _____________ .
f. Zener diode is used as voltage regulator.
g. In a bipolar transistor there are Two PN junctions.
h. A semi conductor has Negative coefficient of resistance.
i. The best biasing is achieved by Potential or Volatge Divider biasing circuit.
j. The point of intersection of dc and ac load line is called Q-point Operating Point .
k. The ideal value of stability factor is Zero .
l. In the saturation region of a transistor both the junctions are Forward Biased .
m. IMPATT diode has negative resistance.
n. A bridge rectifier is not suitable for ___________ voltage rectification.
o. The process of adding the impurity to an intrinsic semi conductor is called Doping .

An ideal current source has Infinity internal resistance.

JFET stand for  Junction Field Effect Transistor .

LED stand for Light Emiting Diode .

The emitter of a transistor is Highly doped.

Photo diode is optimized for its sensitivity to _____________ .

Zener diode is used as voltage regulator.
 

In a bipolar transistor there are Two PN junctions.

A semi conductor has Negative coefficient of resistance.

The best biasing is achieved by Potential or Volatge Divider biasing circuit.

The point of intersection of dc and ac load line is called Q-point Operating Point .

The ideal value of stability factor is Zero .

In the saturation region of a transistor both the junctions are Forward Biased .

IMPATT diode has negative resistance.

 

Related Post

A bridge rectifier is not suitable for ___________ voltage rectification.

The process of adding the impurity to an intrinsic semi conductor is called Doping .

Electronics-1 May 2017 3RD Sem Electrical Engineering Diploma Paper Click Here

Avalanche breakdown.

Why a transistor should be biased.

Varactor diode and its applications.

Need of multistage amplifier.

Intrinsic and extrinsic semiconductor.

Distinguished between FET and BJT.

Silicon is preferred over germanium.

Electronics-1 May 2017 3RD Sem Electrical Engineering Diploma Solved Paper Click Here

Electronics-1 May 2017 3RD Sem Electrical Engineer ing Diploma Paper

Behavior of PN junction in forward and reverse biased condition.

Circuit diagram of a full wave bridge rectifier and its working.

Various coupling used in multistage amplifiers.

Need of coupling network?

Construction, operation and characteristics of MOSFET in depletion mode.

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