Electronics-1 May 2018 3rd Sem Electrical Engineering Diploma Paper

Download Previous Year Diploma Solved Question Paper of Electronics-1 May 2018 3RD Sem Electrical Engineering Diploma Paper

Electronics-1 May 2018 3RD Sem Electrical Engineering Diploma Paper

                                      SECTION-A

Q1. Fill in the blanks.                                                      10×1.5=15

a. In P-type semiconductors, the minority carriers are _______________
b. A MOSFET has ___________ terminals.
c. An ideal Voltage source has __________ internal resistance.
d. Zener diode is made to operate in ____________ region.
e. In a transistor, base is made very ___________ .
f. The three terminals of a transistor are base and ____________
g. The polarity of diode terminals can be checked by ___________
h. A single stage amplifier contains _________ transistors
i. In an amplifier, power gain= current gain * _______ gain
j. For power amplification mostly ____________ coupling is used.

                                      SECTION-B

Q2. Attempt any FIVE questions.                                                                    5×6=30

i. Explain what you mean by constant current source.
ii. What is a transformer? Mention important applications of transformer.
iii. What is a tunnel diode? Draw its symbol and explain its Characteristics.
iv. What do you mean by h-parameters of transistor? Explain.
v. Explain with suitable diagram intrinsic and extrinsic semiconductors.
vi. Differentiate between dc and ac load line.
vii. Explain the term biasing. Why a transistor should be biased?

                                     SECTION-C

Q3. Attempt any three questions.                                                       3×10=30

a. Draw the circuit diagram of transformer coupled amplifier and explain its working and frequency response.
b. Explain the output characteristics of CE transistor. Indicate the three operating regions over it.
c. With the help of diagram and waveform, explain the working of full wave bridge rectifier. Also write its advantages and disadvantages.
d. Draw construction details of JFET and explain why FET is called voltage controlled device?
e. Describe the following filter circuits
i. Shunt capacitor filter
ii. Series inductor filter
iii. Choke input LC filter

Electronics-1 May 2018 3RD Sem Electrical Engineering Solved PSBTE Diploma Paper

                                      SECTION-A

Q1. Fill in the blanks.                                                      10×1.5=15

a. In P-type semiconductors, the minority carriers are Electrons.
b. A MOSFET has Three terminals.
c. An ideal Voltage source has Zero internal resistance.
d. Zener diode is made to operate in Breadown region.
e. In a transistor, base is made very lightly Doped.
f. The three terminals of a transistor are base and Emiiter,Collector
g. The polarity of diode terminals can be checked by Multimeter
h. A single stage amplifier contains One transistors
i. In an amplifier, power gain= current gain * Voltage gain
j. For power amplification mostly Transfromer coupling is used.

In P-type semiconductors, the minority carriers are Electrons

A MOSFET has Three terminals.

An ideal Voltage source has  Zero internal resistance.

Zener diode is made to operate in Breakdown region.

 The three terminals of a transistor are base and Emiiter ,Collector .

The polarity of diode terminals can be checked by Multimeter .

In an amplifier, power gain= current gain * Voltage gain

For power amplification mostly Transformer coupling is used.

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Electronics-1 May 2018 3RD Sem Electrical Engineer ing Diploma Paper

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